NVD5863NL
TYPICAL CHARACTERISTICS
5000
4500
4000
3500
C iss
V GS = 0 V
T J = 25 ° C
10
9
8
7
V DS
Q T
V GS
100
90
80
70
3000
2500
6
5
60
50
2000
1500
4
3
Q GS
Q DS
40
30
1000
500
0
0
C rss
C oss
10
20
30
40
50
60
2
1
0
0
10
20
30
40
50
I D = 82 A
T J = 25 ° C
60
20
10
0
70
1000
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? to ? Source & Drain ? to ? Source
vs. Total Charge
80
V DD = 48 V
I D = 41 A
V GS = 4.5 V
70
60
V GS = 0 V
T J = 25 ° C
100
10
t f
t d(off)
t r
t d(on)
50
40
30
20
10
1
1
10
100
0
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1000
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
300
V SD , SOURCE ? TO ? DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
I D = 23 A
250
100
10 m s
200
10
100 m s
150
1
V GS = 10 V
SINGLE PULSE
T C = 25 ° C
R DS(on) LIMIT
THERMAL LIMIT
1 ms
10 ms
dc
100
50
0.1
0.1
PACKAGE LIMIT
1
10
100
0
25
50
75
100
125
150
175
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
T J , STARTING JUNCTION TEMPERATURE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
http://onsemi.com
4
相关PDF资料
NVD5865NLT4G MOSFET N CH 60V DPAK-4
NVD5867NLT4G MOSFET N-CH 60V 18A DPAK-4
NVD5890NT4G MOSFET N-CH 40V 100A DPAK
NVD6415ANLT4G MOSFET N-CH 100V 23A DPAK-4
NVF2955PT1G MOSFET P CH 60V 1.7A SOT223
NVF5P03T3G MOSFET P-CH 30V 3.7A SOT-223
NVMFD5877NLT1G MOSFET N-CH 60V 17A 8SOIC
NVMFS4841NT1G MOSFET N-CH 30V 89A SO-8FL
相关代理商/技术参数
NVD5865NLT4G 功能描述:MOSFET NFET 60V 34A 18MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD5867NLT4G 功能描述:MOSFET NFET 60V 18A 43MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD5890N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 123 A, Single Na??Channel DPAK
NVD5890NL 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 3.7 m, 123 A, Single N.Channel DPAK
NVD5890NLT4G 功能描述:MOSFET 40V T2 DPAK USR GRESHAM F RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD5890NT4G 功能描述:MOSFET 8-64MHZ 3.3V GP EMI RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD-6 制造商:EDI 制造商全称:Electronic devices inc. 功能描述:NIGHT VISION H.V. RECTIFIER DIODES & ARRAYS
NVD6414ANT4G 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube